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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION With TO-220F package High Voltage High speed switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1200 550 9 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Collector current-peak 12 3 6 TC=25ae 40 150 -55~150 Base current Base current-peak Total power dissipation Junction temperature Storage temperature UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.13 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC5382 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 550 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A 1.0 V VBEsat ICBO ICEO IEBO hFE-1 Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=3A; IB=0.6 A VCB=1200V; IE=0 VCE=550V; IB=0 VEB=9V; IC=0 IC=3A ; VCE=5V 10 1.5 0.1 0.1 0.1 V mA mA mA hFE-2 Switching times ton ts tf TOR NDU ICO E SEM ANG INCH DC current gain IC=1mA ; VCE=5V 10 Turn-on time Storage time IC=3A;IB1=0.6A ;IB2=1.2A RL=50| ;VBB2=4V Fall time 1.3 4.0 |I |I |I s s s 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5382 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 |
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